Abstract
Auger electron intensity of Si-LVV from Si(001) 2×1 surface has been measured at room temperature (RT) for while changing the glancing angle of incident electron beam of RHEED. Such beam-rocking Auger electron spectroscopy (BRAES) profile shows intensity anomalies at surface wave resonance (SWR) conditions. Surface structure of Si(001) 2×1 has been analyzed by rocking curves of diffraction spots within the 0-th Laue zone. Because, RHEED intensities limited to the 0-th Laue zone can be determined by the projected potential of the Si atomic rows along the incident azimuth and then the phase of asymmetric dimers with flip-flop motion can be neglected. According to the Si(001) 2×1 surface structure model confirmed by the rocking curve analysis, it has been found that the calculated wave-field intensity profile on Si atoms reveals the similar intensity anomalies to those of experimental BRAES profile.
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