Abstract
A dependence of the oscillation beating pattern on the magnetic field tilting is experimentally measured in a two-dimensional hole gas in Si MOSFETs. Equations describing experimental results are derived. The anisotropy of the hole g- factor κ = | g z |/| g x | > 2.5 is obtained and found to be related to the magnetic field orientation with respect to two-dimensional hole layer, not to the crystal axes. The effect is explained in terms of the size quantization for four-fold degenerate valence band. Similar phenomenon is predicted for a number of different materials (Ge, GaAs, …).
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