Abstract
Type-II InAs/GaSb superlattices are now excellent candidates for third generation IR imagers. In this paper, a 128 × 128 short-wavelength infrared focal plane array using MBE grown Type-II InAs/GaSb superlattice was reported. Each pixel was a conventional PIN mesa structure with a size of 42 μm × 42 μm, and the distance between adjacent pixels was 50 μm. The detector had a peak response wavelength of 2.8 μm and a peak detectivity of 1.3 × 1011 cm Hz1/2W−1, with a R0A value of 2.0 × 106Ω cm2 and a quantum efficiency of 35 %. A prototype infrared imager with the focal plane array working at 77 K was demonstrated. And its operability was better than 91 % and its response dispersion less than 10 %.
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