Abstract
We report on the growth of AlGaInP quantum dots (QDs) with Al contents between 0%and 10% on GaP substrate by gas-source molecular beam epitaxy and the investigation oftheir morphological and low temperature photoluminescence properties. These high arealdensity QDs show short wavelength emission between 575 and 612 nm depending on theircomposition. The authors interpret the QD emission as originating from indirect type-IItransitions. This interpretation is supported by a single-band effective-mass model, whichallows us to describe the role of differing barrier composition in the QD emission.Time-resolved photoluminescence measurements are performed and discussed with respectto the calculations.
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