Abstract
To utilize excellent spectral characteristics of semiconductor distributed feedback (DFB) lasers in the various fields of optical electronics applications, it is necessary to expand the wavelength range in which their oscillation is available, especially into short wavelength region. Here we describe our effort to develop short wavelength DFB lasers with GaAIAs/GaAs materials. As for 0.88μm range, we have successfully fabricated a high-performance device with very low threshold current by employing buried heterostructure. Introduction of the micro-fabrication techniques such as the reactive ion etching has enabled us to realize a 0.88?Em DFB laser with novel modulated stripe width structure for complete single longitudinal mode oscillation. We have also succeeded in preliminary verification of 0.77μm low threshold room temperature operation in an oxide stripe DFB laser.
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