Short-Wave Infrared Light-Emitting Diodes Using Colloidal CuInS2 Quantum Dots with ZnI2 Dual-Passivation.

Abstract

Short-wave infrared (SWIR) light-emitting diodes (LEDs) have emerged as promising technologies for diverse applications such as optical communication, biomedical imaging, surveillance, and machine vision. Colloidal quantum dots (QDs) are particularly attractive for SWIR LEDs due to their solution processability, compatibility with flexible substrates, and tunable absorption and luminescence. However, the presence of toxic elements or precious metals in most SWIR-emitting QDs poses health, environmental, and cost challenges. In this context, CuInS2 (CIS) QDs are known for low toxicity, cost-effective fabrication, and SWIR-light emitting capability. However, CIS QDs have not yet been directly utilized to fabricate SWIR LEDs to date, which is due to low particle stability, inefficient charge carrier recombination, and significantly blue-shifted luminescence after integrating into LED devices. To address challenges, we propose a dual-passivation strategy using ZnI2 as a chemical additive to enhance both the optical property of plain CIS QDs and charge carrier recombination upon LED device implementation. The resulting CIS-QD-based LEDs exhibit a stable SWIR electroluminescence (EL) peak (over 1000 nm) with a high EL radiance and a record external quantum efficiency in the SWIR region. Our study represents a significant step forward in SWIR-QLED technology, offering a pathway for the development of high-performance, low-cost, and nontoxic SWIR light sources.