Abstract
AbstractWe present results on device fabrication and testing of short wave infrared light emitting diodes based on strained Ge1–xSnx/Ge double heterostructure (DH). Owing to the fact that the component of Sn in Ge1–xSnx is severely limited, evidently insufficient for high performance light emitting devices. The alternative solution is introducing SiN as stressor material, which can reduce the Γ conduction valley, promoting the performance of LEDs. The spectral characteristics of Ge1–xSnx/Ge p‐i‐n DH under different material parameters, such as Sn content, doping concentration are discussed in terms of electroluminescence data. The experimental results revealed the best material parameters and demonstrated the excellent performance of Ge1–xSnx/Ge short wave infrared light emitting diodes.
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