Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator

Abstract

In this work, we proposed new type of synapse device with thin-film transistor (TFT) configuration using an In–Ga–Zn–O (IGZO) as active channel and a poly(4-vinylphenol)–sodium β-alumina (PVP–SBA) as gate insulator for emulating brain-like functions.