Abstract
We discuss the properties of AlGaN∕GaN superlattice (SL) related to the feasibility of a terahertz-range oscillator. The distortion of the conduction-band profile by the polarization fields has been taken into account. We have calculated the conduction-band offset between the pseudomorphic AlGaN barrier and the GaN quantum well, the first miniband width and energy dispersion, as functions of Al content in the barrier. As the short-period SL miniband energy dispersion contains contributions from next to nearest neighbors, it causes anharmonic electron oscillations at the multiples of the fundamental Bloch frequency. The Al content and SL period that favor high-frequency oscillations have been determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
