Abstract
In this paper, the performance of 1.2-kV SiC power MOSFETs having a retrograde channel doping profile is compared to a conventional 1.2-kV SiC power MOSFET through TCAD simulations. The effect of several parameters such as channel length, channel doping profile and depth of the lightly doped channel are investigated to demonstrate the benefits of the retrograde channel doping profile. With this concept, the short-circuit robustness of SiC MOSFETs can be improved and short-channel effects can be reduced.
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