Short channel models and scaling limits of SOI and bulk MOSFETs

B Agrawal,J.M Pimbley,V.K De,J.D Meindl

doi:10.1109/4.272115

Short channel models and scaling limits of SOI and bulk MOSFETs

B Agrawal, J.M Pimbley + Show 2 more

https://doi.org/10.1109/4.272115

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Journal: IEEE Journal of Solid-state Circuits	Publication Date: Jan 1, 1994
Citations: 21

Affiliation: Rensselaer Polytechnic Institute, Georgia Institute of Technology

#Efficient Circuit Simulation #Short Channel Models + Show 8 more

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Abstract

Analytical device-physics-based models for subthreshold drain current in short channel SOI MOSFETs facilitate accurate and efficient circuit simulation. These models also enable prediction of device scaling limits determined by subthreshold conduction and comparison of these limits with bulk MOSFETs for the same threshold and supply voltages.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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