Abstract
Hydrogenated amorphous silicon thin-film transistors have been fabricated by using electron-beam lithography to define channel length down to 0.2 μm. In this way it has been possible to evidence, for the first time, short-channel effects on these devices. In this work two short-channel effects occurring in 0.2 μm devices are discussed: degradation of the off-current as the source-drain voltage is increased and avalanche increase of the drain current for high source-drain voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
