Abstract
Design, fabrication, and characterization of Si-gate short-channel C-MOS/SOS devices with channel length ranging from 1 to 3 µm are presented. Basic device parameters and their interrelations are discussed and illustrated in detail. Extremely-high-speed and low-power capability has been demonstrated for short-channel devices operating from a 5-V supply voltage. The process reproducibility and circuit performance point to the suitability of short-channel C-MOS/SOS technology for VLSI applications.
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