Abstract
By laser interferometry, we have measured the physical displacement of the upper electrode of a chalcogenide switching device. In spite of experimental difficulties, it has been established that: • - a shockwave appears at threshold switching • - the electrode is moving proportionaly to the current through the device • - after the off recovery, the electrode returns slowly to a stable position • - ften the last position is different from the original one All these results show the importance of thermal effects in amorphous semiconductors, the influence of the shape of applied electrical pulses, and the early degradation of the device due to upper electrode lifting in specific electrical conditions. Chalcogenide memory devices exhibit the same characteristics.
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