Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

Abstract

In y Ga 1-y N templates are grown with y ≤ 13.5% and a few nm surface roughness . These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed In y Ga 1-y N templates with y of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of y , in addressing problems facing long wavelength InGaN LEDs. • Relaxed InGaN templates are used to shift blue LED emission from blue to the green gap spectral range. • Indium content>10% shows surface roughness of few nanometers and pit density in the 10 7 cm −2 to the mid 10 8 cm −2 range. • Performance of the blue the blue LED on GaN is about twice that of green LED on InGaN templates.