Abstract
In/Se bilayer films, irradiated using 40MeV silicon ions, with a fluence of 1×1013ions/cm2, were vacuum annealed at 50°C and 100°C for 1h. Optical and structural properties were studied using optical absorption and X-ray diffraction measurements respectively. Irradiated sample, annealed at 50°C had both InSe and In2Se3 phases. Annealing the sample at 100°C resulted in the elimination of In2Se3 phase and formation of InSe along (006) plane in the irradiated system. Absorption measurements also showed only one absorption edge, corresponding to InSe phase. In the case of un-irradiated In/Se system, annealing at 400°C for 1h was required to obtain single-phase indium selenide. Thus it was observed that single-phase indium selenide was formed at much lower annealing temperature in irradiated system in comparison with un-irradiated system.
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