Abstract
Electronic materials can sustain a variety of unusual, but symmetry protected touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudo-relativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. Here we show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Therefore, besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials.
Highlights
A plethora of solid state compounds displays symmetry protected touchings of valence and conduction bands only at a few isolated points in the reciprocal space [1,2,3,4,5,6,7]
We show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator
We develop a general method for computing the elastic responses, and in particular, the shear viscosity in the collisionless or high-frequency regime, in a wide class of nodal semimetals that display invariance under a restricted rotational symmetry and/or anisotropic quasiparticle spectra [see Eqs. (1), (2), and (8)]
Summary
Electronic materials can sustain a variety of unusual, but symmetry protected, touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudorelativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. We show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
