Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects

Abstract

In this paper, the shear horizontal wave in a transversely isotropic piezoelectric semiconductor substrate covered with a metal layer are obtained. The Schottky junction, which is created by the n-type piezoelectric semiconductor and the metal with a lower Fermi level, is considered as an electrically gradient layer between the layer and the substrate. Making use of the state transfer equation method, the transfer matrix of the state vector of the space charge region is derived mathematically. Basing on the numerical calculations, we investigate the physical influences of the doping density, Schottky junction and covered layer thickness on the dispersion and attenuation and the effects of Schottky junction on the wave mode shapes. Our results show that the Schottky junction has negligible influences on the dispersion curve and displacement and stress mode shapes but evident influences on the attenuation curve and the mode shapes of electric potential, electric displacement, carrier perturbation density and the electric current density.