Abstract
Elastically compressed InGaAsP epilayers were grown in a wide interval of compositions (with bandgaps from 1.4 to 1.9 eV) on GaAs(111)B substrates by liquid phase epitaxy. The splitting of the valence band was found by taking the derivative of photocurrent spectra. Its value was as high as meV for narrow-bandgap epilayers ( eV) and eV for wide-bandgap epilayers ( eV). The calculated shear deformation potential, d, was found to be eV for narrow-bandgap and eV for wide-bandgap films. A nonlinear dependence of the valence-band splitting on elastic strain was clearly observed for the wide-bandgap epilayers. This nonlinearity was explained by taking into account the interaction of the light-hole band with the spin - orbit-split valence band.
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