Abstract
Three level charge pumping (3LCP) is used in the evaluation of oxide field effects during substrate hot electron (SHE) injection in nMOSFETs. For increasing oxide field during stress, it is found that interface state generation increases in both the upper and lower parts of the band gap. Also presented are results for the effects of SHE stress on emission time constants and capture cross-section of the interface states. The results indicate that for increasing oxide fields during SHE stress the emission time decreases and interface trap capture cross-section increases in the lower band gap. In the upper band gap the situation is complicated by the lack of complete saturation in the measured charge pumping current; however, a similar increase in emission cross-section is found.
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