Abstract
For the low-power consumption analog and digital circuit applications based on a single-electron transistor, enhancement of its switching performance is required. Our previous works analytically and numerically demonstrated that a discretized charge input device, which comprised a tunnel junction and two capacitors, improved the gain characteristics of single-electron devices. We report the design and fabrication of an aluminum-based single-electron transistor having the discretized charge input function. Flat-plate and interdigital geometries were employed for adjusting capacitances of grounded and the coupling capacitors. The sample exhibited clear switching on input-output characteristics at the finite temperature.
Highlights
Single-electron transistors (SETs) have unique characteristics based on a Coulomb blockade (CB) effect
We proposed a single electron device, which we called input discretizer (ID), generates a discretized charge output from a continuous input voltage signal, and demonstrated that the ID improves the performance of capacitively-connected single electron devices [12]
Thresholds are unclear to determine the the shape of the CB owing to insufficient numbers of step of Vg to the period of the Coulomb oscillation, several steep modulations of I to Vg shown by yellow arrows can be seen
Summary
Single-electron transistors (SETs) have unique characteristics based on a Coulomb blockade (CB) effect. Since the shape of CB region of SETs is a rhombus with respect to axes of bias and gate voltages, threshold voltage is unwillingly changed by the bias voltage. This property is unfavourable from the viewpoint of the current switch application or applications for digital circuits. In terms of providing discontinuous thresholds to the CB, the ID enhances their gain characteristics [13,14]
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