Sharp semiconductor-to-metal transition of VO2 thin films on glass substrates

Abstract

Outstanding phase transition properties of vanadium dioxide (VO2) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (∼4.3 °C) at a near bulk transition temperature of ∼68.4 °C with an electrical resistance change as high as 3.2 × 103 times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO2 films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.