Abstract
AbstractMOCVD AlN layers grown in c‐direction on PVT bulk AlN substrates are investigated by high‐resolution photoluminescence in the energy region of the band gap. The experiments allow for observation of different donor bound exciton lines with a full width at half maximum below 0.5 meV. Assignments are suggested for the substitutional shallow donors silicon and oxygen. The visibility of an excited state of the free exciton with a hole from the highest valence band allows to determine the exciton binding energy to 52.4 meV by use of a simple hydrogen model. The resulting band gap energy is 6.094 eV at 10 K. Comparison with earlier reports on homoepitaxial AlN leads to a new identification of the bands reported there.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
