Abstract

The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A new Ge-rich silicon-germanium (SiGe) waveguide on graded buffer was investigated as a platform for integrated photonic circuits. At a wavelength of 1550 nm, low loss bends with radii as low as 12 µm and Multimode Interferometer beam splitter based on Ge-rich SiGe waveguide on graded buffer were designed, fabricated and characterized. A Mach Zehnder interferometer exhibiting a contrast of more than 10 dB has been demonstrated.

Highlights

  • On-Chip optical interconnects are a promising option to overcome the limitations of electrical interconnects such as the high power consumption and limited bandwidth

  • An optical interconnect link including an electro-absorption modulator and a photodector based on Ge/SiGe quantum wells (QW) heterostructures connected by a passive Ge-rich SiGe waveguide grown on bulk Si wafer was shown

  • This paper experimentally demonstrates the possibility to use the new Gerich SiGe on graded buffer waveguide as a promising platform for photonic integration: sharp bends and an integrated Mach-Zehnder interferometer including SiGe waveguides and a compact beam splitter were demonstrated from Ge-rich SiGe waveguide on graded buffer

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Summary

Introduction

On-Chip optical interconnects are a promising option to overcome the limitations of electrical interconnects such as the high power consumption and limited bandwidth. Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer At a wavelength of 1550 nm, low loss bends with radii as low as 12 μm and Multimode Interferometer beam splitter based on Ge-rich SiGe waveguide on graded buffer were designed, fabricated and characterized.

Results
Conclusion
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