Abstract
ABSTRACTIn this letter we report the transition from self-assembled InAs quantum-wires to quantum-dots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.
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