Shape of the solid-liquid interface and dopant distribution of Bridgman grown Ge:Ga

Abstract

The influence of process parameters and convections on grown crystals during Bridgman-Stockbarger crystal growth is analysed experimentally. It is shown that the shape of the solid-liquid interface depends mainly on thermal boundary conditions of the growth system. In the thermally stabilized Bridgman configuration, convections in the semiconductor melt with low Prandtl number have negligible effect on the shape of the interface. The axial and in particular the radial dopant concentration profiles allow conclusions on influence and type of bouyant convection in the melt to be made.