Abstract
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode. By depositing this type of NiTi films on polymide substrates, we obtained bimorph micro-actuators exhibiting a memory effect.
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