Abstract
A method for fabricating self-assembled InGaAs quantum dashes on a nominal GaAs(001)substrate is presented. InGaAs layers were grown on nominal GaAs(001) substratesat a low temperature to suppress the Stranski–Krastanov transition as well asindium segregation and indium desorption, then annealed at high temperatures toinduce self-assembly. While typical direct growth at the annealing temperaturehas yielded only quantum dot shapes, our approach has enabled us to controlthe shape of self-assembled nanostructures from quantum dashes to quantumdots and eventually quantum dot-chains. The major factor controlling the shapeof InGaAs nanostructures was found to be the thickness of the pseudomorphicIn0.4Ga0.6As layer.
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