Abstract
Shape control of AlGaAs selective oxidation regions by heterointerface intermixing was investigated. The oxidation rate dependence on the intermixing conditions was characterized. Under 880 °C with three hours of intermixing, the oxidation rate was reduced to half that of the usual oxidation without intermixing. The thicknesses of a GaAs capping layer and a deposited SiO2 layer affected the oxidation rate. A detailed analysis of the oxidation after intermixing was carried out by scanning transmission electron microscopy (STEM) measurement. On the basis of the oxidation characteristics with intermixing, in-plane shape control was demonstrated. This result will be helpful in the fabrication of complicated device shapes.
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