Abstract
A synopsis of papers presented at the 9th International Conference on Shallow-Level Centers in Semiconductors (SLCS-9), held in Yumebutai, Awaji Island, Japan, from 24 to 27 September 2000, is given. Recent achievements in the fields of donor and acceptor identification and characterization, majority doping enhancement and co-doping processes, the role of special impurities such as oxygen, hydrogen, nitrogen and carbon, special features revealed by spectroscopy and some technical applications, are summarized.
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