Shallow thermal donors in nitrogen-doped silicon single crystals

Abstract

Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650°C, the STD concentration reaches saturation and this concentration scales with nitrogen content N as N1/2. This implies that an STD includes only one nitrogen atom and that the most likely model of the STD defect is the NOm complex of an interstitial nitrogen atom with m oxygen atoms. The number m is estimated as, on the average, m=3 from data on the temperature dependence of the equilibrium constant for the complex formation reaction