Abstract
Ground state energies of shallow states of donor impurities on cosine-shaped periodically rough interfaces formed by two isotropic semiconductors, such as GaAs/Ga1-xAlxAs or GaAs/vacuum are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that changes in the ground state energies of interface impurity states caused by rough interface are not negligible especially for GaAs/Ga1-xAlxAs interfaces with sharp defects.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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