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Abstract
An A + center, a positively charged acceptor, is observed below 2.8 K in far-infrared photoconductivity measurement on Zn doped Ge under exposure to the room temperature black body radiation. The hole binding energy of the A + center is estimated as 1.9 meV from the low energy threshold of photoconductivity. Low temperature photoconductivity for the sample with low impurity concentration ( N A =1.2×10 14 cm -3 ) is due to isolated A + centers. The photoconductivity peak shifts to higher energy with increase of impurity concentration. The shifted peak corresponds to the transition from an A + related complex to the valence band. Magneto-oscillations of photoconductivity due to isolated A + centers are first observed. The peak photon energies converge to 1.9 meV in the zero field limit.
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