Abstract
Motivated by the recent theoretical predictions for the behavior of hydrogen as shallow acceptor in InSb and GaSb, the muon spin rotation and relaxation measurements were performed. In both cases, an atomic-like muonium signal were obtained, whose hyperfine constants are a few tens percent of the value of muonium in vacuum. The temperature dependence of muonium fraction shows their ionization energies are a few hundred meV. The results imply no shallow muonium as an acceptor in these semiconductors are observed at the present stage.
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