Abstract
Shallow junctions formed by BF 3 and PH 3 PIII were studied. Diodes with good electrical characteristics were obtained on wafers masked by either SiO 2 or SiO 2 plus photoresist patterns. These structures are also compared with diodes fabricated with a conventional ion beam implanter.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
