Abstract
A thorough detailed study of donor and acceptor properties in doped GaAs–(Ga,Al)As semiconductor superlattices is performed within the fractional-dimensional approach, in which the real anisotropic “impurity+semiconductor superlattice” system is modeled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz, and no fittings either with experiment or with previous variational calculations. The present fractional-dimensional calculated results for the donor and acceptor energies in GaAs–(Ga,Al)As semiconductor superlattices are found in quite good agreement with previous variational calculations and available experimental measurements.
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