Abstract
We show that deuteration of a series of boron-doped (100) diamond epitaxial layers can lead to a p-type to n-type conversion. The n-type diamond epilayers have electrical conductivities of a few S/cm at 300 K. These values are a factor 103–105 higher than the n-type conductivities achieved with phosphorus doping. This is a consequence of the shallow donor character of the deuterium-related donors inducing the conversion (ionization energy of 0.34 eV) and of the high donor concentrations. We also show that these donors are formed in a two-step process. First, all the acceptors form (B, D) complexes with one deuterium per boron atom. Then, the presence of excess and more mobile deuterium triggers the formation of the shallow donors. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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