Abstract
Electric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.3–30 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity loading. Sweeping of the Si band gap through the Fermi level near the buried oxide interfaces resulted in the observation of a shallow donor in Si of fairly high local density (≊1018 cm−3), residing in this area; its electron spin resonance signal is turned on and off by positive and negative gate biasing, respectively. The same donor signal has previously been observed in γ-irradiated SIMOX, revealing that γ irradiation has the same effect as positive biasing.
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