Abstract
In this paper we compare and discuss the results we obtained[11–15] by the luminescence study of the shallow levels (and the responsible defects) of three Cu-III-VI 2 compounds (CuInS 2, CuInSe 2, CuGaSe 2). We compare the different results and we show that the emission spectra we observed are rather analogous. This comparison allows us to strengthen or to change the hypothesis already made. We particularly show that the Se (or S) vacancy introduces two donors levels (60 and 80 MeV) in CuInSe 2, two donors levels (80 and 110 meV) in CuGaSe 2, one (or two?) donor level (90 meV) in CuInS 2. The cation vacancy (probably Cu) introduces an acceptor level in the three compounds (40 meV in CuInSe 2, 45 meV in CuInS 2, 50 meV in CuGaSe 2). Moreover, an acceptor level is perhaps introduced by interstitial S (or Se).
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