Abstract
A simple process for the fabrication of selective emitter structures on n-PERT cells is investigated, using shallow Boron emitters obtained by ion implantation. By tuning the emitter doping process parameters, J0e values as low as 10 fA.cm-2 have been obtained with highly resistive profiles. Laser overdoping processes from AlOx passivating layers are tested on these profiles to locally increase the emitter conductivity and allow better contact properties. Through this process the emitter sheet resistance and doping profile may be locally controlled with a limited impact on the J0e values.
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