Abstract
We have investigated the electrical and metallurgical behavior of ohmic contacts to . Auger depth profiling reveals that Ru, Ti, and V have better thermal stability against reaction than Pt, Pd, and Ni on . However, contacts with Pd deposited as the first layer exhibit lower specific contact resistances than contacts with Ti, V, Ni, Ru, or Pt as the first layer. For this reason, multilayer contacts were studied, adding Au as the top layer to minimize the metal sheet resistance. Transmission electron microscopy indicates that contacts aged for 3 days exhibit a uniform and shallow reaction with , with the Pd consuming only of the semiconductor and the Ru serving as an effective diffusion barrier. Specific contact resistances of as deposited and for contacts aged at for 90 days in an evacuated quartz tube were measured for the contacts.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
