Shallow and parallel silicide contacts

Abstract

Ways of making silicide contacts to Si which have a contact depth of about 10 nm are reviewed. Both Si alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85 to 0.75 eV) and low (0.50 to 0.40 eV) Schottky contacts have been demonstrated. Shallow contacts may not be uniform over the entire contact area due to nonuniform interfacial reaction, so nonuniform contacts consisting of a high barrier silicide and a low barrier silicide in parallel have been analyzed.