Abstract
Abstract In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.
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