Abstract
Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, gas flow rate, and gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from to . The addition of gas improved the etch rate and the selectivity. The highest etch rate is achieved at the gas addition of 12 %, The selectivity to PR was 65.75 with gas addition of 24 %. At DC bias voltage of -40 V and gas flow rate of 30 seem, We were able to achieve etch rate as high as with good etch profile.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Korean Institute of Electrical and Electronic Material Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
