Abstract
A simple low temperature ion implantation and ion channeling facility has been set up. Low temperatures upto 70 K has been obtained on a goniometer sample holder by connecting to a continuous flow Helium cryostat with a copper braid. Charge integration is carried out with a transmission Faraday cup with 10 mm diameter aperture and four Faraday cups for performing ion implantation and an electron suppressed 1.5 mm aperture with a TEM grid of 60% beam transmission for ion beam analysis. Typical low temperature ion implantation and channeling experiments have been carried out. Stabilization at intermediate temperatures by controlling the heater at the sample holder and improvement of the achievable lowest temperature by having liquid nitrogen cooled heat shield are in progress.
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