Abstract

The first paper describes Ge-Channel MOSFETs with S/D formed by metal-induced dopant activation. The second paper describes interface engineering and characterization of Hi-K in Ge MOSFET with 1nm EOT. The third paper relates to fabrication of ultra-thin GeOI MOSFETs. The fourth paper describes InGaAs MOSFETs with in-situ PH3 surface plasma passivated HfAlO/TaN and HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /TaN gate stacks. The fifth paper in this session describes Fluorinated HfO2 gate stacks for CMOS for improved reliability. The last paper relates to control of threshold voltage variability in Hi-k-metal Gate stacks through control of grain size and crystallinity in metal gates.

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