Abstract

In this work, an ordered metal-semiconductor molecular system was introduced, and 4-mercaptobenzoic acid (4-MBA) was employed to study the charge transfer (CT) at the metal-semiconductor interface based on surface-enhanced Raman scattering (SERS) spectra. The thickness of the sputtered FeS was controlled so that the surface plasmon resonance (SPR) of Ag underwent a displacement change, and the contribution of the SPR to the CT was studied through surface plasmon (SP) absorption. Furthermore, SERS spectra obtained at different excitation wavelengths were used to calculate the degree of CT in the layer-by-layer sputtering system. When Ag was irradiated with incident light, the strong SPR of Ag was excited, generating an increased electromagnetic field (EM). This amplified EM generated hot electrons at the interface between the FeS and Ag, and then the hot electrons were rearranged. Therefore, we established a simple and effective method for studying the impact of SPR on interfacial CT and analyzed the SERS spectra in accordance with Lombardi's basic theory and the physical effects associated with SPR. This theory is in good agreement with the experimental results. On this basis, we also proposed a mechanism by which SPR impacts the CT, which is beneficial for studying interfacial CT and obtaining an in-depth understanding of the CT mechanism in SERS. This work also enables the expansion of the applications of the SERS technique in the field of nanomaterials.

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