Abstract
Silicon-on-insulator racetrack resonators can be used as multiplexers in wavelength division multiplexing applications. The free spectral range should be comparable to the span of the C-band so that a maximum number of channels can be multiplexed. However, the free spectral range is inversely proportional to the length of the resonator and, therefore, bending losses can become non-negligible. A viable alternative to increase the free spectral range is to use the Vernier effect. In this work, we present the theory of series-coupled racetrack resonators exhibiting the Vernier effect. We demonstrate the experimental performance of the device using silicon-on-insulator strip waveguides. The extended free spectral range is 36 nm and the interstitial peak suppression is from 9 dB to 17 dB.
Highlights
The increasing demand for data bandwidth has resulted in the need for cost-effective interconnects inside the electronic chips of high performance computing systems
One would want to monolithically integrate optics and electronics on a single, silicon platform. This would combine the advantages of high density electronics and high speed photonics giving significant performance enhancements, cost reductions and a possible solution to the abovementioned bottleneck
We have demonstrated series-coupled SOI strip waveguide racetrack resonators with an extended free spectral range (FSR) of 36.2 nm and an improvement in the interstitial peak suppression of greater than 11 dB [10]
Summary
The increasing demand for data bandwidth has resulted in the need for cost-effective interconnects inside the electronic chips of high performance computing systems. 2nd order [4], 4th order [5], and 5th order [2] multiplexers have been fabricated showing a marked improvement in the flatness of the drop port response as well as out-of-band rejection ratios of 32 dB to 40 dB. These multiplexers have relatively small FSRs ranging from 16 nm to 18 nm. For the purpose of comparison, we present measurements made on individual racetrack resonators having the same dimensions as the resonators within the Vernier effect device in order to show that the Vernier effect, has been achieved
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
