Abstract
A composite negative-mobility bulk semiconductor diode (n-GaAs), consisting of several active and passive regions in series, has been tested. The doping times sample length product of each active region of this diode is smaller than a critical value (1012cm-2for n-GaAs) in order to prevent high field domain formation within the device. The diode has no power-impedance limitation and is not subject to filamentary breakdown. RF pulse powers of 9.6 watts at 2.5 GHz and 28 watts at 1.3 GHz have been obtained from these devices consisting of three and four wafers in series.
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