Sequential substrate and channel hot electron injection to separate oxide and interface traps in n-MOSTs

Abstract

In the present work oxide traps present in the gate oxide of n-channel MOS transistors ( n-MOSTs) are filled by substrate hot electron (SHE) injection prior to channel hot electron (CHE) injection stress. By employment of SHE to fill existing oxide traps at low fields without generating interface traps, the contributions of oxide trap charging and interface trap generation on CHE induced n-MOST degradation may be separated. Using this sequential two-stage SHE/CHE stress, it is shown that (1) oxide trap charging and interface trap generation contribute to the threshold voltage shift and subthreshold distortion during short stress duration and (2) after the existing oxide traps are filled, interface trap generation dominates during long stress duration.